IISc. scientists create hybrid transistor device

Published - December 21, 2017 11:18 pm IST - Bengaluru

In a first, scientists at the Indian Institute of Science (IISc.) have combined two different types of transistors — MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) and tunnel FETs (Field Effect Transistor) — into a single device that can easily switch between power efficient and high performance modes, depending on the need.

The device has a special type of metal-semiconductor junction, which can be tweaked to make it behave either like a MOSFET or a tunnel FET.

The hybrid variety is an answer to issues that the most common MOSFETs have, that of being unable to bring down the supply voltage for MOSFETs proportionately with transistor size, because of a fundamental design flaw.

To overcome this, the tunnel FETs are being used. But they also have a disadvantage: the desired output — the current flowing when the transistor is on — is greatly reduced.

The hybrid device is capable of switching between MOSFET and tunnel FET modes using two gates instead of one, and a special type of electron barrier called Schottky junction. The Schottky barrier is created when a metal and semiconductor are joined under certain conditions.

According to a release, the dual-gated device was able to operate at a voltage lower than possible with conventional MOSFETs, greatly reducing power consumption. It also showed superior performance compared to current state-of-the-art tunnel FETs.

“You have flexibility,” says Shubhadeep Bhattacharjee, PhD student at the Centre for Nano Science and Engineering, IISc and first author of the paper published in Applied Physics Letters.

0 / 0
Sign in to unlock member-only benefits!
  • Access 10 free stories every month
  • Save stories to read later
  • Access to comment on every story
  • Sign-up/manage your newsletter subscriptions with a single click
  • Get notified by email for early access to discounts & offers on our products
Sign in

Comments

Comments have to be in English, and in full sentences. They cannot be abusive or personal. Please abide by our community guidelines for posting your comments.

We have migrated to a new commenting platform. If you are already a registered user of The Hindu and logged in, you may continue to engage with our articles. If you do not have an account please register and login to post comments. Users can access their older comments by logging into their accounts on Vuukle.